GT1K2P15D5
Goford Semiconductor
SI7116BDN-T1-GE3
Part Number：
SI7116BDN-T1-GE3
Category：
Single FETs, MOSFETs
Manufacturer：
Vishay Siliconix
Description：
MOSFET N-CH 40V 18.4A/65A PPAK
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Vgs(th) (Max) @ Id 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 48 nC @ 10 V
- Drain to Source Voltage (Vdss) 40 V
- Supplier Device Package PowerPAK® 1212-8
- Package / Case PowerPAK® 1212-8
- Power Dissipation (Max) 5W (Ta), 62.5W (Tc)
- Current - Continuous Drain (Id) @ 25°C 18.4A (Ta), 65A (Tc)
- Rds On (Max) @ Id, Vgs 7.4mOhm @ 16A, 10V
- Input Capacitance (Ciss) (Max) @ Vds 1915 pF @ 20 V
