GT1K2P15D5
Goford Semiconductor
SI7615BDN-T1-GE3
Part Number：
SI7615BDN-T1-GE3
Category：
Single FETs, MOSFETs
Manufacturer：
Vishay Siliconix
Description：
MOSFET P-CH 20V 29A/104A PPAK
Packaging：
-
ROHS Status:
Yes
Currency:
USD
Specifications
- Part Status Discontinued at
- Mounting Type Surface Mount
- Technology MOSFET (Metal Oxide)
- FET Feature -
- Operating Temperature -55°C ~ 150°C (TJ)
- FET Type P-Channel
- Vgs(th) (Max) @ Id 1.5V @ 250µA
- Drain to Source Voltage (Vdss) 20 V
- Gate Charge (Qg) (Max) @ Vgs 155 nC @ 10 V
- Vgs (Max) ±12V
- Rds On (Max) @ Id, Vgs 3.8mOhm @ 20A, 10V
- Supplier Device Package PowerPAK® 1212-8
- Package / Case PowerPAK® 1212-8
- Current - Continuous Drain (Id) @ 25°C 29A (Ta), 104A (Tc)
- Input Capacitance (Ciss) (Max) @ Vds 4890 pF @ 10 V
- Power Dissipation (Max) 5.2W (Ta), 66W (Tc)
