GT1K2P15D5
Goford Semiconductor
SIHA24N80AE-GE3
Part Number：
SIHA24N80AE-GE3
Category：
Single FETs, MOSFETs
Manufacturer：
Vishay Siliconix
Description：
MOSFET N-CH 800V 9A TO220
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs(th) (Max) @ Id 4V @ 250µA
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Package / Case TO-220-3 Full Pack
- Drain to Source Voltage (Vdss) 800 V
- Gate Charge (Qg) (Max) @ Vgs 89 nC @ 10 V
- Vgs (Max) ±30V
- Power Dissipation (Max) 35W (Tc)
- Current - Continuous Drain (Id) @ 25°C 9A (Tc)
- Supplier Device Package TO-220 Full Pack
- Rds On (Max) @ Id, Vgs 184mOhm @ 10A, 10V
- Input Capacitance (Ciss) (Max) @ Vds 1836 pF @ 100 V
