GT1K2P15D5
Goford Semiconductor
SIHB22N65E-T1-GE3
Part Number：
SIHB22N65E-T1-GE3
Category：
Single FETs, MOSFETs
Manufacturer：
Vishay Siliconix
Description：
N-CHANNEL 650V
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs(th) (Max) @ Id 4V @ 250µA
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Gate Charge (Qg) (Max) @ Vgs 110 nC @ 10 V
- Supplier Device Package TO-263 (D2PAK)
- Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Current - Continuous Drain (Id) @ 25°C 22A (Tc)
- Vgs (Max) ±30V
- Rds On (Max) @ Id, Vgs 180mOhm @ 11A, 10V
- Drain to Source Voltage (Vdss) 650 V
- Power Dissipation (Max) 227W (Tc)
- Input Capacitance (Ciss) (Max) @ Vds 2415 pF @ 100 V
