GT1K2P15D5
Goford Semiconductor
SIHFL210TR-GE3
Part Number：
SIHFL210TR-GE3
Category：
Single FETs, MOSFETs
Manufacturer：
Vishay Siliconix
Description：
MOSFET N-CHANNEL 200V
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs(th) (Max) @ Id 4V @ 250µA
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Drain to Source Voltage (Vdss) 200 V
- Gate Charge (Qg) (Max) @ Vgs 8.2 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 140 pF @ 25 V
- Package / Case TO-261-4, TO-261AA
- Supplier Device Package SOT-223
- Power Dissipation (Max) 2W (Ta), 3.1W (Tc)
- Current - Continuous Drain (Id) @ 25°C 960mA (Tc)
- Rds On (Max) @ Id, Vgs 1.5Ohm @ 580mA, 10V
