GT1K2P15D5
Goford Semiconductor
SIHFR120-GE3
Part Number：
SIHFR120-GE3
Category：
Single FETs, MOSFETs
Manufacturer：
Vishay Siliconix
Description：
MOSFET N-CHANNEL 100V
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 100 V
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs(th) (Max) @ Id 4V @ 250µA
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Input Capacitance (Ciss) (Max) @ Vds 360 pF @ 25 V
- Gate Charge (Qg) (Max) @ Vgs 16 nC @ 10 V
- Current - Continuous Drain (Id) @ 25°C 7.7A (Tc)
- Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
- Power Dissipation (Max) 2.5W (Ta), 42W (Tc)
- Rds On (Max) @ Id, Vgs 270mOhm @ 4.6A, 10V
- Supplier Device Package TO-252AA
