GT1K2P15D5
Goford Semiconductor
SIHK125N60E-T1-GE3
Part Number：
SIHK125N60E-T1-GE3
Category：
Single FETs, MOSFETs
Manufacturer：
Vishay Siliconix
Description：
E SERIES POWER MOSFET POWERPAK 1
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Gate Charge (Qg) (Max) @ Vgs 44 nC @ 10 V
- Current - Continuous Drain (Id) @ 25°C 21A (Tc)
- Drain to Source Voltage (Vdss) 600 V
- Vgs (Max) ±30V
- Vgs(th) (Max) @ Id 5V @ 250µA
- Rds On (Max) @ Id, Vgs 125mOhm @ 12A, 10V
- Power Dissipation (Max) 132W (Tc)
- Supplier Device Package PowerPAK®10 x 12
- Package / Case 8-PowerBSFN
- Input Capacitance (Ciss) (Max) @ Vds 1811 pF @ 100 V
