GT1K2P15D5
Goford Semiconductor
SIHP054N65E-GE3
Part Number：
SIHP054N65E-GE3
Category：
Single FETs, MOSFETs
Manufacturer：
Vishay Siliconix
Description：
E SERIES POWER MOSFET TO-220AB,
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- FET Feature -
- Grade -
- Qualification -
- Supplier Device Package TO-220AB
- Package / Case TO-220-3
- Operating Temperature -55°C ~ 150°C (TJ)
- Drain to Source Voltage (Vdss) 600 V
- Vgs (Max) ±30V
- Current - Continuous Drain (Id) @ 25°C 47A (Tc)
- Vgs(th) (Max) @ Id 5V @ 250µA
- Power Dissipation (Max) 312W (Tc)
- Gate Charge (Qg) (Max) @ Vgs 108 nC @ 20 V
- Rds On (Max) @ Id, Vgs 58mOhm @ 20A, 10V
- Input Capacitance (Ciss) (Max) @ Vds 3769 pF @ 100 V
