GT1K2P15D5
Goford Semiconductor
SIHP6N80AE-GE3
Part Number：
SIHP6N80AE-GE3
Category：
Single FETs, MOSFETs
Manufacturer：
Vishay Siliconix
Description：
MOSFET N-CH 800V 5A TO220AB
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs(th) (Max) @ Id 4V @ 250µA
- FET Feature -
- Grade -
- Qualification -
- Supplier Device Package TO-220AB
- Package / Case TO-220-3
- Operating Temperature -55°C ~ 150°C (TJ)
- Drain to Source Voltage (Vdss) 800 V
- Current - Continuous Drain (Id) @ 25°C 5A (Tc)
- Vgs (Max) ±30V
- Gate Charge (Qg) (Max) @ Vgs 22.5 nC @ 10 V
- Power Dissipation (Max) 62.5W (Tc)
- Rds On (Max) @ Id, Vgs 950mOhm @ 2A, 10V
- Input Capacitance (Ciss) (Max) @ Vds 422 pF @ 100 V
