GT1K2P15D5
Goford Semiconductor
SIJH600E-T1-GE3
Part Number：
SIJH600E-T1-GE3
Category：
Single FETs, MOSFETs
Manufacturer：
Vishay Siliconix
Description：
N-CHANNEL 60-V (D-S) 175C MOSFET
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs(th) (Max) @ Id 4V @ 250µA
- Vgs (Max) ±20V
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade -
- Qualification -
- Drain to Source Voltage (Vdss) 60 V
- Gate Charge (Qg) (Max) @ Vgs 212 nC @ 10 V
- Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
- Supplier Device Package PowerPAK® 8 x 8
- Package / Case PowerPAK® 8 x 8
- Power Dissipation (Max) 3.3W (Ta), 333W (Tc)
- Current - Continuous Drain (Id) @ 25°C 37A (Ta), 373A (Tc)
- Rds On (Max) @ Id, Vgs 0.92mOhm @ 20A, 10V
- Input Capacitance (Ciss) (Max) @ Vds 9950 pF @ 30 V
