GT1K2P15D5
Goford Semiconductor
SIJK140E-T1-GE3
Part Number：
SIJK140E-T1-GE3
Category：
Single FETs, MOSFETs
Manufacturer：
Vishay Siliconix
Description：
N-CHANNEL 40 V (D-S) 175 C MOSFE
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade -
- Qualification -
- Vgs(th) (Max) @ Id 3.5V @ 250µA
- Drain to Source Voltage (Vdss) 40 V
- Gate Charge (Qg) (Max) @ Vgs 470 nC @ 10 V
- Package / Case 8-PowerSFN
- Rds On (Max) @ Id, Vgs 0.47mOhm @ 20A, 10V
- Supplier Device Package PowerPAK®10 x 12
- Power Dissipation (Max) 17W (Ta), 536W (Tc)
- Current - Continuous Drain (Id) @ 25°C 140A (Ta), 795A (Tc)
- Input Capacitance (Ciss) (Max) @ Vds 18510 pF @ 20 V
