GT1K2P15D5
Goford Semiconductor
SIR681DP-T1-RE3
Part Number：
SIR681DP-T1-RE3
Category：
Single FETs, MOSFETs
Manufacturer：
Vishay Siliconix
Description：
MOSFET P-CH 80V 17.6A/71.9A PPAK
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- FET Type P-Channel
- Gate Charge (Qg) (Max) @ Vgs 105 nC @ 10 V
- Drain to Source Voltage (Vdss) 80 V
- Vgs(th) (Max) @ Id 2.6V @ 250µA
- Supplier Device Package PowerPAK® SO-8
- Package / Case PowerPAK® SO-8
- Power Dissipation (Max) 6.25W (Ta), 104W (Tc)
- Rds On (Max) @ Id, Vgs 11.2mOhm @ 10A, 10V
- Current - Continuous Drain (Id) @ 25°C 17.6A (Ta), 71.9A (Tc)
- Input Capacitance (Ciss) (Max) @ Vds 4850 pF @ 40 V
