GT1K2P15D5
Goford Semiconductor
SIS176LDN-T1-GE3
Part Number：
SIS176LDN-T1-GE3
Category：
Single FETs, MOSFETs
Manufacturer：
Vishay Siliconix
Description：
N-CHANNEL 70 V (D-S) MOSFET POWE
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Drain to Source Voltage (Vdss) 70 V
- Vgs (Max) ±12V
- Vgs(th) (Max) @ Id 1.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 19 nC @ 4.5 V
- Supplier Device Package PowerPAK® 1212-8
- Package / Case PowerPAK® 1212-8
- Power Dissipation (Max) 3.6W (Ta), 39W (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 3.3V, 4.5V
- Current - Continuous Drain (Id) @ 25°C 12.9A (Ta), 42.3A (Tc)
- Rds On (Max) @ Id, Vgs 10.9mOhm @ 10A, 4.5V
- Input Capacitance (Ciss) (Max) @ Vds 1660 pF @ 35 V
