GT1K2P15D5
Goford Semiconductor
SISA18BDN-T1-GE3
Part Number：
SISA18BDN-T1-GE3
Category：
Single FETs, MOSFETs
Manufacturer：
Vishay Siliconix
Description：
N-CHANNEL 30 V (D-S) MOSFET POWE
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Drain to Source Voltage (Vdss) 30 V
- Gate Charge (Qg) (Max) @ Vgs 19 nC @ 10 V
- Vgs(th) (Max) @ Id 2.4V @ 250µA
- Package / Case 8-PowerWDFN
- Vgs (Max) +20V, -16V
- Input Capacitance (Ciss) (Max) @ Vds 680 pF @ 15 V
- Rds On (Max) @ Id, Vgs 6.83mOhm @ 10A, 10V
- Current - Continuous Drain (Id) @ 25°C 18A (Ta), 60A (Tc)
- Power Dissipation (Max) 3.2W (Ta), 36.8W (Tc)
- Supplier Device Package PowerPAK® 1212-8PT
