GT1K2P15D5
Goford Semiconductor
SISH536DN-T1-GE3
Part Number：
SISH536DN-T1-GE3
Category：
Single FETs, MOSFETs
Manufacturer：
Vishay Siliconix
Description：
N-CHANNEL 30 V (D-S) MOSFET POWE
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Drain to Source Voltage (Vdss) 30 V
- Vgs(th) (Max) @ Id 2.2V @ 250µA
- Input Capacitance (Ciss) (Max) @ Vds 1150 pF @ 15 V
- Vgs (Max) +16V, -12V
- Package / Case PowerPAK® 1212-8SH
- Supplier Device Package PowerPAK® 1212-8SH
- Power Dissipation (Max) 3.57W (Ta), 26.5W (Tc)
- Rds On (Max) @ Id, Vgs 3.25mOhm @ 10A, 10V
- Current - Continuous Drain (Id) @ 25°C 24.7A (Ta), 67.4A (Tc)
