GT1K2P15D5
Goford Semiconductor
SQJ431AEP-T1_BE3
Part Number：
SQJ431AEP-T1_BE3
Category：
Single FETs, MOSFETs
Manufacturer：
Vishay Siliconix
Description：
P-CHANNEL 200-V (D-S) 175C MOSFE
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade Automotive
- Qualification AEC-Q101
- FET Type P-Channel
- Drain to Source Voltage (Vdss) 200 V
- Vgs(th) (Max) @ Id 3.5V @ 250µA
- Power Dissipation (Max) 68W (Tc)
- Current - Continuous Drain (Id) @ 25°C 9.4A (Tc)
- Input Capacitance (Ciss) (Max) @ Vds 3700 pF @ 25 V
- Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
- Gate Charge (Qg) (Max) @ Vgs 85 nC @ 10 V
- Supplier Device Package PowerPAK® SO-8
- Package / Case PowerPAK® SO-8
- Rds On (Max) @ Id, Vgs 305mOhm @ 3.8A, 10V
