GT1K2P15D5
Goford Semiconductor
SQJ459EP-T2_GE3
Part Number：
SQJ459EP-T2_GE3
Category：
Single FETs, MOSFETs
Manufacturer：
Vishay Siliconix
Description：
P-CHANNEL 60-V (D-S) 175C MOSFET
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade Automotive
- Qualification AEC-Q101
- FET Type P-Channel
- Drain to Source Voltage (Vdss) 60 V
- Vgs(th) (Max) @ Id 2.5V @ 250µA
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Current - Continuous Drain (Id) @ 25°C 52A (Tc)
- Power Dissipation (Max) 83W (Tc)
- Gate Charge (Qg) (Max) @ Vgs 108 nC @ 10 V
- Package / Case PowerPAK® SO-8 Dual
- Supplier Device Package PowerPAK® SO-8 Dual
- Rds On (Max) @ Id, Vgs 18mOhm @ 3.5A, 10V
- Input Capacitance (Ciss) (Max) @ Vds 4586 pF @ 30 V
