GT1K2P15D5
Goford Semiconductor
STP30N65DM6AG
Part Number：
STP30N65DM6AG
Category：
Single FETs, MOSFETs
Manufacturer：
STMicroelectronics
Description：
DISCRETE
Packaging：
Bulk
ROHS Status:
Yes
Currency:
USD
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- FET Feature -
- Package / Case TO-220-3
- Operating Temperature -55°C ~ 150°C (TJ)
- Grade Automotive
- Qualification AEC-Q101
- Supplier Device Package TO-220
- Current - Continuous Drain (Id) @ 25°C 28A (Tc)
- Vgs (Max) ±25V
- Drain to Source Voltage (Vdss) 650 V
- Gate Charge (Qg) (Max) @ Vgs 46 nC @ 10 V
- Rds On (Max) @ Id, Vgs 115mOhm @ 10A, 10V
- Input Capacitance (Ciss) (Max) @ Vds 2000 pF @ 100 V
- Power Dissipation (Max) 223W (Tc)
- Vgs(th) (Max) @ Id 4.75V @ 250µA
