GT1K2P15D5
Goford Semiconductor
TK068N65Z5,S1F
Part Number：
TK068N65Z5,S1F
Category：
Single FETs, MOSFETs
Manufacturer：
Toshiba Semiconductor and Storage
Description：
650V DTMOS6-HSD TO-247 68MOHM
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature 150°C
- Package / Case TO-247-3
- Gate Charge (Qg) (Max) @ Vgs 68 nC @ 10 V
- Vgs (Max) ±30V
- Drain to Source Voltage (Vdss) 650 V
- Power Dissipation (Max) 270W (Tc)
- Supplier Device Package TO-247
- Current - Continuous Drain (Id) @ 25°C 37A (Ta)
- Rds On (Max) @ Id, Vgs 68mOhm @ 18.5A, 10V
- Vgs(th) (Max) @ Id 4.5V @ 1.69mA
- Input Capacitance (Ciss) (Max) @ Vds 3765 pF @ 300 V
