GT1K2P15D5
Goford Semiconductor
TK3A90E,S4X
Part Number：
TK3A90E,S4X
Category：
Single FETs, MOSFETs
Manufacturer：
Toshiba Semiconductor and Storage
Description：
PB-F POWER MOSFET TRANSISTOR TO-
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs(th) (Max) @ Id 4V @ 250µA
- FET Feature -
- Grade -
- Qualification -
- Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V
- Operating Temperature 150°C
- Current - Continuous Drain (Id) @ 25°C 2.5A (Ta)
- Package / Case TO-220-3 Full Pack
- Drain to Source Voltage (Vdss) 900 V
- Vgs (Max) ±30V
- Power Dissipation (Max) 35W (Tc)
- Input Capacitance (Ciss) (Max) @ Vds 650 pF @ 25 V
- Supplier Device Package TO-220SIS
- Rds On (Max) @ Id, Vgs 4.6Ohm @ 1.3A, 10V
