GT1K2P15D5
Goford Semiconductor
TK5R0A15Q5,S4X
Part Number：
TK5R0A15Q5,S4X
Category：
Single FETs, MOSFETs
Manufacturer：
Toshiba Semiconductor and Storage
Description：
150V UMOS10-HSD TO-220SIS 5MOHM
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Package / Case TO-220-3 Full Pack
- Drain to Source Voltage (Vdss) 150 V
- Supplier Device Package TO-220SIS
- Power Dissipation (Max) 53W (Tc)
- Gate Charge (Qg) (Max) @ Vgs 96 nC @ 10 V
- Drive Voltage (Max Rds On, Min Rds On) 8V, 10V
- Operating Temperature 175°C
- Vgs(th) (Max) @ Id 4.5V @ 2.2mA
- Input Capacitance (Ciss) (Max) @ Vds 7820 pF @ 75 V
- Current - Continuous Drain (Id) @ 25°C 76A (Ta), 76A (Tc)
- Rds On (Max) @ Id, Vgs 5mOhm @ 38A, 10V
