GT1K2P15D5
Goford Semiconductor
TK9R6E15Q5,S1X
Part Number：
TK9R6E15Q5,S1X
Category：
Single FETs, MOSFETs
Manufacturer：
Toshiba Semiconductor and Storage
Description：
150V UMOS10-HSD TO-220 9.6MOHM
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Package / Case TO-220-3
- Supplier Device Package TO-220
- Power Dissipation (Max) 200W (Tc)
- Gate Charge (Qg) (Max) @ Vgs 50 nC @ 10 V
- Drain to Source Voltage (Vdss) 150 V
- Drive Voltage (Max Rds On, Min Rds On) 8V, 10V
- Operating Temperature 175°C
- Vgs(th) (Max) @ Id 4.5V @ 1.1mA
- Input Capacitance (Ciss) (Max) @ Vds 3690 pF @ 75 V
- Current - Continuous Drain (Id) @ 25°C 104A (Ta), 52A (Tc)
- Rds On (Max) @ Id, Vgs 9.6mOhm @ 26A, 10V
