GT1K2P15D5
Goford Semiconductor
TP65H300G4LSGB-TR
Part Number：
TP65H300G4LSGB-TR
Category：
Single FETs, MOSFETs
Manufacturer：
Transphorm
Description：
GANFET N-CH 650V 6.5A QFN8X8
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Current - Continuous Drain (Id) @ 25°C 6.5A (Tc)
- Vgs (Max) ±12V
- Drain to Source Voltage (Vdss) 650 V
- Package / Case 8-VDFN Exposed Pad
- Power Dissipation (Max) 21W (Tc)
- Technology GaNFET (Gallium Nitride)
- Gate Charge (Qg) (Max) @ Vgs 8.8 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 730 pF @ 400 V
- Vgs(th) (Max) @ Id 2.8V @ 500µA
- Drive Voltage (Max Rds On, Min Rds On) 6V
- Supplier Device Package 8-PQFN (8x8)
- Rds On (Max) @ Id, Vgs 312mOhm @ 6.5A, 6V
