GT1K2P15D5
Goford Semiconductor
TQM019NH04CR-V RLG
Part Number：
TQM019NH04CR-V RLG
Category：
Single FETs, MOSFETs
Manufacturer：
Taiwan Semiconductor Corporation
Description：
40V, 100A, SINGLE N-CHANNEL POWE
Packaging：
Tape & Reel (TR)
ROHS Status:
Yes
Currency:
USD
Specifications
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade Automotive
- Qualification AEC-Q101
- Power Dissipation (Max) 150W (Tc)
- Drain to Source Voltage (Vdss) 40 V
- Drive Voltage (Max Rds On, Min Rds On) 7V, 10V
- Gate Charge (Qg) (Max) @ Vgs 134 nC @ 10 V
- Package / Case 8-PowerTDFN
- Current - Continuous Drain (Id) @ 25°C 30A (Ta), 100A (Tc)
- Vgs(th) (Max) @ Id 3.6V @ 250µA
- Mounting Type Surface Mount, Wettable Flank
- Rds On (Max) @ Id, Vgs 1.9mOhm @ 50A, 10V
- Supplier Device Package 8-PDFNU (4.9x5.75)
- Input Capacitance (Ciss) (Max) @ Vds 9044 pF @ 25 V
