GT1K2P15D5
Goford Semiconductor
XP10NA8R4H
Part Number：
XP10NA8R4H
Category：
Single FETs, MOSFETs
Manufacturer：
YAGEO XSemi
Description：
MOSFET N CH 100V 66A TO-252
Packaging：
Tape & Reel (TR)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 100 V
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs(th) (Max) @ Id 4V @ 250µA
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
- Current - Continuous Drain (Id) @ 25°C 66A (Tc)
- Supplier Device Package TO-252
- Rds On (Max) @ Id, Vgs 8.4mOhm @ 30A, 10V
- Gate Charge (Qg) (Max) @ Vgs 67.2 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 3248 pF @ 80 V
- Power Dissipation (Max) 2W (Ta), 69W (Tc)
