GT1K2P15D5
Goford Semiconductor
XP4NA2R2HCST
Part Number：
XP4NA2R2HCST
Category：
Single FETs, MOSFETs
Manufacturer：
YAGEO XSemi
Description：
MOSFET N CH 40V 36.5A SPPAK5X6
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs(th) (Max) @ Id 4V @ 250µA
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Gate Charge (Qg) (Max) @ Vgs 80 nC @ 10 V
- Drain to Source Voltage (Vdss) 40 V
- Package / Case SC-100, SOT-669
- Input Capacitance (Ciss) (Max) @ Vds 4000 pF @ 30 V
- Supplier Device Package SPPAK 5X6
- Current - Continuous Drain (Id) @ 25°C 36.5A (Ta), 100A (Tc)
- Rds On (Max) @ Id, Vgs 2.28mOhm @ 40A, 10V
- Power Dissipation (Max) 5W (Ta), 96.1W (Tc)
