GT1K2P15D5
Goford Semiconductor
XPQR8308QB,LXHQ
Part Number：
XPQR8308QB,LXHQ
Category：
Single FETs, MOSFETs
Manufacturer：
Toshiba Semiconductor and Storage
Description：
80V UMOS10 L-TOGL 0.83MOHM
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- FET Feature -
- Grade Automotive
- Qualification AEC-Q101
- Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
- Drain to Source Voltage (Vdss) 80 V
- Power Dissipation (Max) 750W (Tc)
- Gate Charge (Qg) (Max) @ Vgs 305 nC @ 10 V
- Operating Temperature 175°C
- Package / Case 8-PowerBSFN
- Supplier Device Package L-TOGL™
- Current - Continuous Drain (Id) @ 25°C 350A (Ta)
- Rds On (Max) @ Id, Vgs 0.83mOhm @ 175A, 10V
- Vgs(th) (Max) @ Id 3.5V @ 3.2mA
- Input Capacitance (Ciss) (Max) @ Vds 24700 pF @ 10 V
